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Figure 1.  (a) XRD patterns of the films, demonstrating c-axis preferential orientation. (b)–(e) EDS elemental mappings of Y, Ba, Cu, and Hf, respectively, illustrating the distribution of each element within the film. (f) Field dependence of normalized critical current density (J_C/J_C0). (g) Schematic illustration of the etching process for BHO-added YBCO films.

Figure 2.  (a) Raman spectra of BHO-added YBCO films etched for 5 min–30 min. (b) Variation of vibration intensity I_O(1) as a function of etching time. (c) Evolution of the intensity ratio I_O(2,3)/I_O(4) with etching time.

Figure 3.  (a)–(d) SEM images of BHO-added YBCO films before etching and after etching for 5 min, 10 min, and 15 min, respectively, showing the surface morphology evolution.

Figure 4.  Doping-dependent optical conductivity and interband transitions in BHO-added YBCO thin films. (a) Optical conductivity (σ₁) spectra at room temperature, showing distinct doping-induced modifications. (b) Drude–Lorentz model fitting of σ₁. (c)–(d) Doping-dependent variations in the intensity and energy positions of peaks B and G.

Figure 5.  Dielectric function and energy loss function analysis of BHO-added YBCO thin films. (a)–(b) Real (ε₁) and imaginary (ε₂) components of the dielectric function at different doping concentrations. (c) Energy loss function Im(−1/ε), highlighting plasma resonance energy and carrier dynamics. (d) Magnified view of ε₁ and ε₂.