Ni Jian, Zhang Jian-Jun, Cao Yu, Wang Xian-Bao, Li Chao, Chen Xin-Liang, Geng Xin-Hua, Zhao Ying. 2011: Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature, Chinese Physics B, 20(8): 403-407. doi: 10.1088/1674-1056/20/8/087309
| Citation: |
Ni Jian, Zhang Jian-Jun, Cao Yu, Wang Xian-Bao, Li Chao, Chen Xin-Liang, Geng Xin-Hua, Zhao Ying. 2011: Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature, Chinese Physics B, 20(8): 403-407. doi: 10.1088/1674-1056/20/8/087309
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Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature
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Institute of Photo-electronics Thin Film Devices and Technique of Nankai University,Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin,Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education(Nankai University),Tianjin 300071,China
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Available Online:
30/08/2011
- Fund Project:
the National High Technology Research and Development Program of China(Grant 2009AA05Z422)%the National Basic Research Program of China(Grant .2011CBA00705,2011CBA00706,and 2011CBA00707)%the Natural Science Foundation of Tianjin(Grant 08JCZDJC22200)
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