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2014 Volume 23 Issue 3

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Wu Wei, Zhang Bo, Luo Xiao-Rong, Fang Jian, Li Zhao-Ji. 2014: Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer, Chinese Physics B, 23(3): 625-629. doi: 10.1088/1674-1056/23/3/038503

Citation:

Wu Wei, Zhang Bo, Luo Xiao-Rong, Fang Jian, Li Zhao-Ji. 2014: Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer, Chinese Physics B, 23(3): 625-629. doi: 10.1088/1674-1056/23/3/038503

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Available Online: 30/12/2014
Fund Project: the National Science and Technology Project of the Ministry of Science and Technology of China(Grant 2010ZX02201)%the National Natural Science Foundation of China(Grant 61176069)%the National Defense Pre-Research of China(Grant 51308020304)