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2015 Volume 24 Issue 11
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Zhang Lin. 2015: Adiabatic quantum pump in a zigzag graphene nanoribbon junction, Chinese Physics B, null(11): 117202. doi: 10.1088/1674-1056/24/11/117202
Citation: Zhang Lin. 2015: Adiabatic quantum pump in a zigzag graphene nanoribbon junction, Chinese Physics B, null(11): 117202. doi: 10.1088/1674-1056/24/11/117202
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Adiabatic quantum pump in a zigzag graphene nanoribbon junction

  • Corresponding author: Zhang Lin
  • Available Online: 30/12/2015
  • Fund Project: the National Natural Science Foundation of China(Grant 110704033)%the Natural Science Foundation of Jiangsu Province, China(Grant BK2010416)%the Natural Science Foundation for Colleges and Universities in Jiangsu Province, China(Grant 13KJB140005)
  • The adiabatic electron transport is theoretically studied in a zigzag graphene nanoribbon (ZGNR) junction with two time-dependent pumping electric fields. By modeling a ZGNR p–n junction and applying the Keldysh Green’s function method, we find that a pumped charge current is flowing in the device at a zero external bias, which mainly comes from the photon-assisted tunneling process and the valley selection rule in an even-chain ZGNR junction. The pumped charge current and its ON and OFF states can be efficiently modulated by changing the system parameters such as the pumping frequency, the pumping phase difference, and the Fermi level. A ferromagnetic ZGNR device is also studied to generate a pure spin current and a fully polarized spin current due to the combined spin pump effect and the valley valve effect. Our finding might pave the way to manipulate the degree of freedom of electrons in a graphene-based electronic device.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Adiabatic quantum pump in a zigzag graphene nanoribbon junction

    Corresponding author: Zhang Lin
  • Available Online: 30/12/2015

Abstract: The adiabatic electron transport is theoretically studied in a zigzag graphene nanoribbon (ZGNR) junction with two time-dependent pumping electric fields. By modeling a ZGNR p–n junction and applying the Keldysh Green’s function method, we find that a pumped charge current is flowing in the device at a zero external bias, which mainly comes from the photon-assisted tunneling process and the valley selection rule in an even-chain ZGNR junction. The pumped charge current and its ON and OFF states can be efficiently modulated by changing the system parameters such as the pumping frequency, the pumping phase difference, and the Fermi level. A ferromagnetic ZGNR device is also studied to generate a pure spin current and a fully polarized spin current due to the combined spin pump effect and the valley valve effect. Our finding might pave the way to manipulate the degree of freedom of electrons in a graphene-based electronic device.

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