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2015 Volume 24 Issue 4
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Hossein Karbaschi, Gholam Reza Rashedi. 2015: Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions, Chinese Physics B, null(4): 047305. doi: 10.1088/1674-1056/24/4/047305
Citation: Hossein Karbaschi, Gholam Reza Rashedi. 2015: Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions, Chinese Physics B, null(4): 047305. doi: 10.1088/1674-1056/24/4/047305
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Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions

  • Department of Physics, University of Isfahan, Hezar Jerib Ave., Isfahan 81746-73441, Iran

  • Available Online: 01/01/2015
  • We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using the Dirac–Bogoliubov–de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission prob-ability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (EFN～400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of EFN?mv2F
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions

  • Available Online: 01/01/2015

Abstract: We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using the Dirac–Bogoliubov–de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission prob-ability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (EFN～400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of EFN?mv2F

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