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2017 Volume 26 Issue 10
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Tie-Cheng Han, Hong-Dong Zhao, Lei Yang, Yang Wang. 2017: Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier, Chinese Physics B, 26(10): 433-437. doi: 10.1088/1674-1056/26/10/107301
Citation: Tie-Cheng Han, Hong-Dong Zhao, Lei Yang, Yang Wang. 2017: Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier, Chinese Physics B, 26(10): 433-437. doi: 10.1088/1674-1056/26/10/107301
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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

  • School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

  • Available Online: 30/12/2017
  • Fund Project: the Natural Science Foundation of Hebei Province,China (Grant F2013202256)
  • In this work,we use a 3-nm-thick A10.64In0.36N back-barrier layer in In0.17A10.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement.Based on two-dimensional device simulations,the influences of A10.64In0.36N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAIN/GaN HEMT are investigated,theoretically.It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick A10.64In0.36N back-barrier and no parasitic electron channel is formed.Comparing with the conventional InA1N/GaN HEMT,the electron confinement of the back-barrier HEMT is significantly improved,which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier).For a 70-nm gate length,the peak current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the back-barrier HEMT are 172 GHz and 217 GHz,respectively,which are higher than those of the conventional HEMT with the same gate length.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

  • Available Online: 30/12/2017

Abstract: In this work,we use a 3-nm-thick A10.64In0.36N back-barrier layer in In0.17A10.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement.Based on two-dimensional device simulations,the influences of A10.64In0.36N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAIN/GaN HEMT are investigated,theoretically.It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick A10.64In0.36N back-barrier and no parasitic electron channel is formed.Comparing with the conventional InA1N/GaN HEMT,the electron confinement of the back-barrier HEMT is significantly improved,which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier).For a 70-nm gate length,the peak current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the back-barrier HEMT are 172 GHz and 217 GHz,respectively,which are higher than those of the conventional HEMT with the same gate length.

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