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2018 Volume 27 Issue 4
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Lian Liu, Wen-Xiang Chen, Rui-Qiang Wang, Liang-Bin Hu. 2018: Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls, Chinese Physics B, 27(4): 384-390. doi: 10.1088/1674-1056/27/4/047201
Citation: Lian Liu, Wen-Xiang Chen, Rui-Qiang Wang, Liang-Bin Hu. 2018: Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls, Chinese Physics B, 27(4): 384-390. doi: 10.1088/1674-1056/27/4/047201
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Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

  • Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China

  • Available Online: 01/01/2018
  • Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically. It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier's Fermi wavelength. When there are more than one domain wall presented in a magnetic semiconductor nanowire, not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport, and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls' width and the domain walls' separation.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

  • Available Online: 01/01/2018

Abstract: Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically. It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier's Fermi wavelength. When there are more than one domain wall presented in a magnetic semiconductor nanowire, not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport, and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls' width and the domain walls' separation.

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