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2009 Volume 18 Issue 10
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An Xia, Fan Chun-Hui, Huang Ru, Guo Yue, Xu Cong, Zhang Xing, Wang Yang-Yuan. 2009: The modulation of Schott ky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique, Chinese Physics B, 18(10): 4465-4469.
Citation: An Xia, Fan Chun-Hui, Huang Ru, Guo Yue, Xu Cong, Zhang Xing, Wang Yang-Yuan. 2009: The modulation of Schott ky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique, Chinese Physics B, 18(10): 4465-4469.
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The modulation of Schott ky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

  • Institute of Microelectronics, Peking University, Beijing 100871, China

  • Available Online: 30/10/2009
  • Fund Project: the National Natural Science Foundation of China(Grant 60625403,60806033,90207004)%the StateKey Development Program for Basic Research of China(Grant 2006CB302701)%the NCET Program
  • This paper reports that the Schottky barrier height modulation of NiSi/n-si is experimentally investigated byadopting a novel silicide-as-diffusion-source technique.which avoids the damage to the NiSi/Si interface induced fromthe conventional dopant segregation method.In addition,the impact of post-BF2 implantation after silicidation on thesurface morphology of Ni silicides iS also illustrated.The thermat stabihty of Ni silicides can be improved by sihcide-as-diffusion-source technique.Besides,the electron Schottky barrier height is successfully modulated bv 0.11 eV at aboron dose of 1015 cm-2 in comparison with the non.implanted samples.The change of barrier height is not attributedto the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causesthe upward bending of conducting band.The results demonstrate the feasibility of novel silicide-as-diffusion-sourcetechnique for the fabrication of Schottky source/drain Si MOS devices.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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The modulation of Schott ky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

  • Available Online: 30/10/2009

Abstract: This paper reports that the Schottky barrier height modulation of NiSi/n-si is experimentally investigated byadopting a novel silicide-as-diffusion-source technique.which avoids the damage to the NiSi/Si interface induced fromthe conventional dopant segregation method.In addition,the impact of post-BF2 implantation after silicidation on thesurface morphology of Ni silicides iS also illustrated.The thermat stabihty of Ni silicides can be improved by sihcide-as-diffusion-source technique.Besides,the electron Schottky barrier height is successfully modulated bv 0.11 eV at aboron dose of 1015 cm-2 in comparison with the non.implanted samples.The change of barrier height is not attributedto the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causesthe upward bending of conducting band.The results demonstrate the feasibility of novel silicide-as-diffusion-sourcetechnique for the fabrication of Schottky source/drain Si MOS devices.

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