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2009 Volume 18 Issue 4
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Li Gui-Jun, Hou Guo-Fu, Han Xiao-Yan, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhao Yin, Geng Xin-Hua. 2009: The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells, Chinese Physics B, 18(4): 1674-1678.
Citation: Li Gui-Jun, Hou Guo-Fu, Han Xiao-Yan, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhao Yin, Geng Xin-Hua. 2009: The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells, Chinese Physics B, 18(4): 1674-1678.
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The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

  • Key Laboratory of Opto-Electronic Information Science and Technology,Tianjin 300071,China

  • Available Online: 30/04/2009
  • Fund Project: the State Key Development Program for Basic Research of China(Grant 2006CB202602 and 2006CB202603)%the National Natural Science Foundation of China(Grant 60506003)
  • This paper reports that a double N layer(a-Si:H/μc-Si:H)is used to substitute the single microcrystalline siliconn layer(n-μc-Si:H)in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells.The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement.The new n/p tunnel recombination junction shows a better ohmic contact.In addition,the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance.The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

  • Available Online: 30/04/2009

Abstract: This paper reports that a double N layer(a-Si:H/μc-Si:H)is used to substitute the single microcrystalline siliconn layer(n-μc-Si:H)in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells.The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement.The new n/p tunnel recombination junction shows a better ohmic contact.In addition,the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance.The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.

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