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2007 Volume 16 Issue 7
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Hao Ai-Min, Gao Chun-Xiao, Li Ming, He Chun-Yuan, Huang Xiao-Wei, Zhang Dong-Mei, Yu Cui-Ling, Guan Rui, Zou Guang-Tian. 2007: A study on the electrical property of HgSe under high pressure, Chinese Physics B, 16(7): 2087-2090.
Citation: Hao Ai-Min, Gao Chun-Xiao, Li Ming, He Chun-Yuan, Huang Xiao-Wei, Zhang Dong-Mei, Yu Cui-Ling, Guan Rui, Zou Guang-Tian. 2007: A study on the electrical property of HgSe under high pressure, Chinese Physics B, 16(7): 2087-2090.
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A study on the electrical property of HgSe under high pressure

  • State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China;Department of Mathematics and Physics, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China

  • State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China

  • Available Online: 30/07/2007
  • Fund Project: the National Natural Science Foundation of China(Grant 40473034, 40404007, 10574055 and 50532020)%by the State Key Development Program for Basic Research of China(Grant 2005CB724404)
  • Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal,similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa,corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure,respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure.For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.
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A study on the electrical property of HgSe under high pressure

  • Available Online: 30/07/2007

Abstract: Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal,similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa,corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure,respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure.For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.

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