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2006 Volume 15 Issue 1
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Du Gang, Liu Xiao-Yan, Han Ru-Qi. 2006: Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation, Chinese Physics B, 15(1): 177-181.
Citation: Du Gang, Liu Xiao-Yan, Han Ru-Qi. 2006: Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation, Chinese Physics B, 15(1): 177-181.
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Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

  • Department of Microelectronic,Peking University,Beijing 100871,China

  • Available Online: 30/01/2006
  • Fund Project: the Special Foundation for State Major Basic Research Program of China(Grant G2000035602)%the National Natural Science Foundation of China(Grant 90307006)
  • A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

  • Available Online: 30/01/2006

Abstract: A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

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