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2004 Volume 13 Issue 11
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Wang Chun-Ming, Wang Jin-Feng, Wang Chun-Lei, Chen Hong-Cun, Su Wen-Bin, Zang Guo-Zhong, Qi Peng, Zhao Ming-Lei, Ming Bao-Quan. 2004: Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors, Chinese Physics B, 13(11): 1936-1940.
Citation: Wang Chun-Ming, Wang Jin-Feng, Wang Chun-Lei, Chen Hong-Cun, Su Wen-Bin, Zang Guo-Zhong, Qi Peng, Zhao Ming-Lei, Ming Bao-Quan. 2004: Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors, Chinese Physics B, 13(11): 1936-1940.
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Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

  • School of Physics and Microelectronics, National Key Laboratory of Crystal Materials,Shandong University, Jinan 250100, China

  • Available Online: 30/11/2004
  • Fund Project: the Natural Science Foundation of Shandong Province, China (Grant Z2003F04)
  • The effects of barium on electrical and dielectric properties of the SnO2·Co2Oa.Ta2O5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO3 concentration from 0mol%to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO2-based varistors.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

  • Available Online: 30/11/2004

Abstract: The effects of barium on electrical and dielectric properties of the SnO2·Co2Oa.Ta2O5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO3 concentration from 0mol%to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO2-based varistors.

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