2003 Volume 12 Issue 11
Article Contents

Chen Xiao-Bo(陈晓波), Wang Ling(王凌), Lü Lan-Bin(吕兰斌), Zhang Zhi-Guo(张治国), Zhu Jane G., Du Wei-Min(杜为民), and Yang Guo-Zhen(杨国桢). 2003: The mechanism research of the Cr4+Nd3+:YAG laser, Chinese Physics B, 12(11): 1246-1250.
Citation: Chen Xiao-Bo(陈晓波), Wang Ling(王凌), Lü Lan-Bin(吕兰斌), Zhang Zhi-Guo(张治国), Zhu Jane G., Du Wei-Min(杜为民), and Yang Guo-Zhen(杨国桢). 2003: The mechanism research of the Cr4+Nd3+:YAG laser, Chinese Physics B, 12(11): 1246-1250.

The mechanism research of the Cr4+Nd3+:YAG laser

  • Available Online: 30/11/2003
  • Fund Project: the National Natural Science Foundation of China (Grant 19874033 and 10174008)
  • The 946nm diode-pump microchip self-Q-switched laser of a chromium and neodymium codoped yttrium aluminum garnet crystal material (Cr4+Nd3+:YAG) is studied, especially about its physical mechanism of operation. The 4F3/2→ 4I9/2 transition of Nd3+ ion is beneficial to achieving laser oscillation in a quasi-three-level system based on coating the cavity mirrors of the microchip with films that suppress the 1064nm operation and enhance the 946nm laser. The Cr4+ ion is a saturable absorber. The initial loss Nt1 is high, which acts as the threshold for laser oscillation. The stable loss Nt2 is low because the Cr4+ ion is acceleratively bleached by the fast enhancement of the oscillating laser. The high Nt1, small Nt2 and fast progresses permit the oscillating laser of the Cr4+Nd3+:YAG to have a good self-Q-switched property whose full width at half maximum is about 4.2ns. Its highest laser power is about 5.7mW. Its peak power is about 150W. Its good fundamental transverse TEM00 mode results from the absorption bleaching established by both the pump and oscillating lasers, which suppress other transverse mode and allow the oscillation only in the fundamental transverse TEM00 mode.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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The mechanism research of the Cr4+Nd3+:YAG laser

Abstract: The 946nm diode-pump microchip self-Q-switched laser of a chromium and neodymium codoped yttrium aluminum garnet crystal material (Cr4+Nd3+:YAG) is studied, especially about its physical mechanism of operation. The 4F3/2→ 4I9/2 transition of Nd3+ ion is beneficial to achieving laser oscillation in a quasi-three-level system based on coating the cavity mirrors of the microchip with films that suppress the 1064nm operation and enhance the 946nm laser. The Cr4+ ion is a saturable absorber. The initial loss Nt1 is high, which acts as the threshold for laser oscillation. The stable loss Nt2 is low because the Cr4+ ion is acceleratively bleached by the fast enhancement of the oscillating laser. The high Nt1, small Nt2 and fast progresses permit the oscillating laser of the Cr4+Nd3+:YAG to have a good self-Q-switched property whose full width at half maximum is about 4.2ns. Its highest laser power is about 5.7mW. Its peak power is about 150W. Its good fundamental transverse TEM00 mode results from the absorption bleaching established by both the pump and oscillating lasers, which suppress other transverse mode and allow the oscillation only in the fundamental transverse TEM00 mode.

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